, d nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MJ11028, mj11030, mj11032 (npn) mj11029, mj11033 (pnp) high-current complementary silicon power transistors high-current complementary silicon power transistors are for use as output devices in complementary general purpose amplifier applications. features ? high dc current gain - hfe = 1000 (min) @ ic = 25 adc hfe = 400 (min) @ ic = 50 adc ? curves to 100 a (pulsed) ? diode protection to rated ic ? monolithic construction with built-in base-emitter shunt resistor ? junction temperature to + 200 c maximum ratings (tj = 25c unless otherwise noted) rating collector-emitter voltage m j 1 1 028/29 mj11030 mj1 1032/33 collector-base voltage m j 1 1 028/29 mj11030 mj 11 032/33 emitter-base voltage collector current - continuous -peak (note 1) base current - continuous total power dissipation @ tc = 25c derate above 25c @ tc = 100c operating and storage junction temperature range symbol vceo vcbo vebo ic ib pd tj,tstg value 60 90 120 60 90 120 5.0 50 100 2.0 300 1.71 -55to+200 unit vdc vdc vdc adc adc w w/c "c thermal characteristics characteristic maximum lead temperature tor soldering purposes for < 10 seconds thermal resistance, junction-to-case symbol tl r6jc max 275 0.58 unit c c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions).and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. pulse test: pulse width = 5 [is. duty cycle < 10%. 50 ampere complementary darlington power transistors 60-120 volts 300 watts npn collector case pnp collector case emitter 2 MJ11028 mj11030 mj11032 emitter 2 mj11029 mj11033 rro-3) quality semi-conductors
pnp mj11029 mj11033 base MJ11028, mj11030, mj11032 (npn) collector o 3.0k =25 npn MJ11028 mj11030 mj11032 base i o emitter figure 1. darlington circuit schematic electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min max unit off characteristics collector-emitter breakdown voltage (note 1) MJ11028, mj11029 (lc = 1 00 madc, ib = 0) mj11030 mj11032, mj11033 collector-emitter leakage current (vce = 60 vdc, rbe = 1 kq) m j 11 028, mj 1 1 029 (vce = 90 vdc, rbe = 1 kq) mj11030 (vce = 120 vdc, rbe = 1 kq) mj11032, mj11033 (vce = 60 vdc, rbe = 1 kq, tc = 150c) MJ11028, mj11029 (vce = 120 vdc, rbe = 1 kq, tc = 150c) mj11032, mj11033 emitter cutoff current (vbe = 5 vdc, lc = 0) collector-emitter leakage current (vce = 50 vdc, ib = 0) v(br)ceo !cer iebo iceo 60 90 120 - - - ~ 2 2 2 10 10 5 2 vdc madc madc madc on characteristics (note 1) dc current gain (lc = 25 adc, vce = 5 vdc) (lc = 50 adc, vce = 5 vdc) collector-emitter saturation voltage (lc = 25 adc, ib = 250 madc) (lc = 50 adc, ib = 500 madc) base-emitter saturation voltage (lc = 25 adc, ib = 200 madc) (lc = 50 adc, ib = 300 madc) hfe vce(sat) vbe(sat) 1 k 400 : _ 18k 2.5 3.5 3.0 4.5 ~ vdc vdc 1. pulse test: pulse width < 300ns, duty cycle < 2.0%.
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